Defect-induced Magnetism in Oxides

Experiments and calculations in recent years have shown that non-magnetic materials can become magnetic by incorporating defects into them. These are for example the so-called diluted magnetic semiconductors or dielectric oxides such as MgO. The main question that arises for these systems is the role of the kinds of defects and their distribution and concentration. Its influence on the spatial distribution of the created magnetic moment and on the magnetic interaction is of major interest. From the latter predictions on critical temperatures can be made.

Our group focuses on the so-called d⁰-magnetism, which is characterized by the absence of partly occupied d-electron orbitals. The latter are the cause for magnetism in most oxides and metals. We concentrate on ZnO and MgO as host. For this we work together with the experimental group of Prof. Esquinazi from Leipzig    within the SFB 762.

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