B6: Spin-dependent tunneling in oxide heterostructures
We will investigate interface states in type-III "broken gap" oxide heterostructures. The tunnel coupling of the (higher lying) valence band of the p-type material and the (lower lying) conduction band of the n-type material can lead to a gap and topologically protected states. We will fabricate suitable oxide material combinations with pulsed laser deposition and investigate their magneto-transport properties. The emergence of such topologically protected states in type-III heterostructures and their contribution to magneto-transport properties and tunneling resistance will be modeled theoretically considering interaction and disorder effects. The contribution of Coulomb interaction to rearrangement of edge channels and the occurrence of exciton condensates will be described theoretically; the consequences to dissipative edge transport and tunneling resistance will be studied.
Principal Investigators
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Prof. Dr. Marius Grundmann ⇒
grundmann@physik.uni-leipzig.de phone: +49 (0) 341/97 32651 fax: +49 (0) 341/97 32668 |
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Prof. Dr. Bernd Rosenow ⇒
phone: +49 (0) 341/97 32468 fax: +49 (0) 341/97 32469 |
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