B4: Lateral transport in all-oxide field-effect structures
Polar (Mg,Zn)/ZnO quantum well heterostructures will be used to localize a single charge carrier type, in particular holes, after optical excitation. The lifetime of such carriers will be investigated as a function of the geometry. For this purpose we will study photoluminescence transients and lateral transport. We search for a suitable quantum well geometry allowing for effective charge carrier separation (one type tunnels out of the well). after successful localization of holes we investigate the magnetic coupling of these holes with magnetic ions. This is a novel approach, termed "polarization field-induced magnetic coupling"; towards diluted magnetic semiconductors such as ZnO. For the realization of quantum wells with defined composition gradient along the growth direction, radially segmented targets for pulsed laser deposition will be used. Also symmetric quantum wells with various width and barrier height will be subjected to electrical fields for the determination of the polarization of the ground state.
Principal Investigators
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Dr. Holger von Wenckstern ⇒
phone: +49 (0) 341/97 32604 |
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Prof. Dr. Marius Grundmann ⇒
grundmann@physik.uni-leipzig.de phone: +49 (0) 341/97 32651 |
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